SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

The SMD Dual MOSFET is a complementary pair enhancement mode device, designed for high-efficiency power management. This new generation component minimises on-state resistance while maintaining superior switching performance, making it an excellent choice for modern, compact electronics where power efficiency and thermal management are critical.

It features a low input capacitance and exceptionally low on-resistance, which contributes to reduced power losses and improved overall system efficiency. The fast switching speed and low input/output leakage current further enhance its suitability for high-frequency applications, ensuring reliable operation in demanding environments.

Key Specifications & Performance

• Drain-Source Voltage (Vds): 30V for both N and P channels at an ambient temperature of +25°C.
• Continuous Drain Current (Id): 3.4A for the N-channel and 2.8A for the P-channel at +25°C.
• On-State Resistance (RDS(on)): A low 0.038ohm (typical) at +25°C, with maximums of 0.06ohm for N-channel and 0.095ohm for P-channel.
• Power Dissipation: 1.12W typical, with a rating of 840mW per channel.
• Gate-Source Voltage (Vgs): ±20V, providing a robust gate drive tolerance.
• Package: Housed in a compact, surface-mount TSOT-26 case with 6 pins, ideal for space-constrained PCB designs.
• Temperature Range: Offers a wide operating and storage temperature range from -55°C to +150°C.

Typical Applications

This dual MOSFET is ideally suited for a variety of power management functions, including backlighting drivers for displays, DC-DC converters for voltage regulation, and other applications requiring efficient power switching and control. Its complementary N and P-channel design allows for efficient push-pull and half-bridge circuit configurations.