SMD N-Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT-23

The DIODES INC. VN10LF is an N-channel enhancement mode vertical DMOS FET designed for efficient power management in surface-mount applications. Housed in a compact SOT-23 package, this power MOSFET offers reliable switching performance with a rapid turn-on and turn-off time of just 10ns maximum.

This component features a drain-source voltage of 60V and a continuous drain current of 150mA at an ambient temperature of 25°C, making it suitable for low-power switching tasks. The static drain-source on-state resistance is 5 ohms maximum at VGS=10V, ensuring minimal power loss during operation. Additionally, it can handle a pulsed drain current of up to 3A, providing flexibility for varying circuit demands.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 150mA
• Gate-Source Voltage: ±20V
• Power Dissipation: 330mW at Tamb=25°C
• On-State Resistance (Rds(on)): 5 Ohm max
• Gate Source Threshold Voltage Max: 2.5V
• Zero Gate Voltage Drain Current: 10µA max
• Switching Time: 10ns max
• Package / Case Style: SOT-23
• Mounting Type: Surface Mount
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C

With its robust operating temperature range and compact dimensions (43mm x 33mm x 15mm), weighing just 0.033 grams, this MOSFET is a highly effective solution for space-constrained electronic designs.