STMicroelectronics N-Channel Power MOSFET, 1.5 kV, 2.5 A, 9 ohm, H2PAK-2 SMD

The STMicroelectronics PowerMESH™ N-Channel Power MOSFET is a high-voltage, high-performance semiconductor device engineered for demanding switching applications. Built using the company's advanced strip layout-based MESHOVERLAY™ process, it features optimised intrinsic capacitances and minimised gate charge (Qg), enabling exceptionally high-speed switching capabilities. This design ensures efficient operation with reduced switching losses, making it ideal for power conversion circuits.

With a robust drain-source voltage (Vds) rating of 1.5 kV and a continuous drain current (Id) of 2.5 A, this MOSFET is capable of handling significant power levels. It offers a low on-state resistance (Rds(on)) of 9 ohms at a 10V gate drive, contributing to lower conduction losses and improved overall system efficiency. The device is 100% avalanche tested, guaranteeing reliability and ruggedness under stressful operating conditions, including inductive load switching.

Housed in a compact, three-pin H2PAK-2 surface-mount package, it is designed for modern, space-constrained PCB layouts. The package supports a high maximum power dissipation of 140W and can operate in environments with temperatures up to 150°C, ensuring stable performance in a wide range of industrial and commercial settings.

Key Specifications

• Technology: PowerMESH™ with MESHOVERLAY™ process
• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 1.5 kV
• Continuous Drain Current (Id): 2.5 A
• Drain-Source On-State Resistance (Rds(on)): 9 ohm (tested at 10V)
• Package: H2PAK-2 (Surface Mount)
• Number of Pins: 3
• Gate-Source Threshold Voltage (Max): 4V
• Maximum Power Dissipation: 140W
• Maximum Operating Temperature: 150°C
• Dimensions: 33mm (Width) x 43mm (Height) x 15mm (Depth)
• Weight: 1.623 grams<br