STMicroelectronics N Channel Power MOSFET 55V 80A TO-220

The STMicroelectronics N Channel Power MOSFET is a high-performance component engineered using the unique Single Feature Size strip-based process. This advanced STripFET II design results in an extremely high packing density, which ensures remarkably low on-state resistance, rugged avalanche characteristics, and fewer critical alignment steps during manufacturing. This makes it an exceptional choice for demanding switching applications.

Featuring a robust design, this MOSFET delivers reliable performance with a drain-to-source voltage of 55V and a continuous drain current of 80A. It boasts a power dissipation of 300W and a low on-state resistance of just 6.5mohm at a gate-to-source voltage of 10V. The component operates efficiently across a wide junction temperature range from -55°C to 175°C, ensuring stability in various environments.

Key Specifications

• Channel Type: N Channel
• Drain to Source Voltage (Vds): 55V
• Gate to Source Voltage: ±20V
• Continuous Drain Current (Id): 80A
• Power Dissipation (Pd): 300W
• Drain Source On State Resistance: 8000µohm
• Gate Source Threshold Voltage Max: 3V
• Transistor Case Style: TO-220
• Number of Pins: 3

Ideal for integration into power management systems, consumer electronics, portable devices, and industrial equipment, this through-hole MOSFET provides a dependable solution for efficient power switching. The compact dimensions and lightweight design facilitate easy installation on printed circuit boards.