STMicroelectronics N Channel Power MOSFET, 60 V, 35 A, 0.028 ohm, TO-252

The STMicroelectronics N Channel Power MOSFET utilises the advanced STripFET™II process with a single feature size strip-based design. This innovative technology results in a transistor with extremely high packing density, which ensures exceptionally low on-resistance. Additionally, the device offers rugged avalanche characteristics and requires fewer critical alignment steps, allowing for remarkable manufacturing reproducibility.

Designed for high efficiency and robust performance, this power MOSFET features extremely high dv/dt capability and supports logic-level gate drive, making it highly suitable for a variety of demanding switching applications. With a maximum drain-source voltage of 60 V and a continuous drain current of 35 A, it provides reliable power management.

Applications

This component is ideally suited for use in industrial environments, automotive systems, and motor drive control circuits.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 35 A
• Drain Source On-State Resistance: 0.028 ohm
• Transistor Case Style: TO-252 (DPAK)
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 2.5 V
• Gate Source Threshold Voltage Max: 1.7 V
• Power Dissipation: 70 W
• No. of Pins: 3
• Operating Temperature Max: 175°C
• Product Weight: 0.541 grams
• Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)

Engineered for consistent performance, this surface mount MOSFET is a reliable choice for your electronic design needs.