STMicroelectronics Power MOSFET, N Channel, 60V, 4A, 0.1 Ohm, SOT-223

The STMicroelectronics N Channel Power MOSFET is an advanced STripFET™ II device housed in a compact 4-pin SOT-223 surface mount package. Engineered for high efficiency, this power MOSFET features a drain source voltage of 60V and a continuous drain current of 4A, making it a robust choice for demanding electronic circuits.

A standout feature of this component is its specifically designed structure that minimises input capacitance and gate charge, resulting in a low threshold drive. This ensures efficient switching performance with reduced power loss. Furthermore, the device boasts exceptional dv/dt capability and is 100% avalanche tested, guaranteeing reliability under strenuous operating conditions.

Applications

This MOSFET is highly suitable for a wide range of switching applications. It is particularly ideal for use as a primary switch in advanced DC-DC converters within the telecom and computer industries. Additionally, it is perfectly suited for any application that requires low gate charge drive requirements, offering designers flexibility and superior performance in power management designs.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 4A
• Drain Source On State Resistance: 0.1 ohm
• Power Dissipation: 3.3W
• Gate Source Threshold Voltage Max: 2.8V
• Operating Temperature Max: 150°C
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• No. of Pins: 4
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 0.203 g