STMICROELECTRONICS N-Channel Power MOSFET, 60V, 55A, TO-220

The STMICROELECTRONICS STP55NF06L is a high-performance N-channel Power MOSFET, representing the latest development in STMicroelectronics' unique Single Feature Size™ strip-based process. This advanced manufacturing technology yields a transistor with an extremely high packing density, resulting in a very low on-state resistance, rugged avalanche characteristics, and enhanced manufacturing reproducibility.

Designed for demanding power management applications, this MOSFET offers exceptional dv/dt capability and is 100% avalanche tested to ensure reliability under stressful operating conditions. Its characterisation is application-oriented, making it a versatile and robust choice for engineers designing high-efficiency circuits.

With a continuous drain current (Id) of 55A and a low drain-source on-state resistance (Rds(on)) of 0.018Ω (tested at 10V), it ensures minimal power loss and efficient switching performance. The device is housed in the industry-standard TO-220 through-hole package, which provides excellent thermal performance and is easy to mount for prototyping or production.

Key Specifications & Features

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 55A
• Drain-Source On-State Resistance (Rds(on)): 0.018Ω @ 10V
• Gate-Source Threshold Voltage (Max): 1.7V
• Power Dissipation: 95W
• Package / Case Style: TO-220 (Through Hole)
• Number of Pins: 3
• Maximum Operating Temperature: 175°C
• Special Feature: 100% Avalanche Tested
• Special Feature: Exceptional dv/dt Capability

This reliable power MOSFET is an excellent component for building efficient and durable electronic systems, offering a balance of high current handling, low resistance, and proven ruggedness.