STMicroelectronics STP6NK90Z Power MOSFET 900V 5.8A TO-220

The STMicroelectronics STP6NK90Z is a high-voltage N-channel Power MOSFET built on advanced SuperMESH™ technology. This design optimises the well-established strip-based PowerMESH™ layout to significantly reduce on-resistance while ensuring excellent dv/dt capability for demanding applications. The transistor is engineered to meet today's efficiency challenges with minimised gate charge and lower power dissipation, making it a reliable choice for industrial power systems.

With a drain-source voltage rating of 900V and a continuous drain current of 5.8A, this MOSFET delivers robust performance in high-voltage switching circuits. The device is 100% avalanche tested, ensuring durability under extreme conditions. Its very low intrinsic capacitance and excellent manufacturing repeatability guarantee consistent, high-quality operation in critical applications.

The TO-220 package provides a compact, through-hole mounting solution suitable for a wide range of power electronics. Key specifications include a maximum drain-source on-state resistance of 2 ohms at a 10V gate drive, a maximum gate-source threshold voltage of 3.75V, and a maximum power dissipation of 140W. This component operates reliably at temperatures up to 150°C, making it suitable for demanding environments.

Ideal for industrial power supplies, this MOSFET offers the performance and durability required for high-voltage switching, power conversion, and other demanding electronic systems.