VISHAY IRF710PBF N-Channel Power MOSFET, 400V, 1.5A, 3.6 ohm, TO-220AB

The VISHAY IRF710PBF is a third-generation N-channel power MOSFET designed to deliver fast switching, a rugged device structure, and low on-resistance. With a drain-source voltage of 400V and a continuous drain current of 1.5A, this MOSFET is suitable for a wide range of power management applications in commercial and industrial settings.

This power MOSFET features a dynamic dV/dt rating and is repetitive avalanche rated, ensuring reliable performance under demanding conditions. It can operate at temperatures up to 150°C, making it a robust choice for high-temperature environments. The device is easy to parallel and has a simple drive requirement, simplifying circuit design and implementation.

Housed in a TO-220AB package, it is designed for through-hole mounting and can dissipate up to 20W of power. With an on-state resistance of 3.6 ohms at a test voltage of 10V and a maximum gate-source threshold voltage of 4V, it offers efficient switching and control. The three-pin configuration is universally preferred for applications requiring power dissipation levels up to approximately 50W.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 400V
• Continuous Drain Current (Id): 1.5A
• On-State Resistance (Rds(on)): 3.6 ohm
• Package: TO-220AB
• Mounting: Through Hole
• Gate-Source Threshold Voltage (Max): 4V
• Power Dissipation: 20W
• Operating Temperature (Max): 150°C

Applications

This MOSFET is ideal for power management circuits, including switch-mode power supplies, DC-DC converters, and motor control systems. Its rugged design and high-temperature capability make it a dependable choice for demanding industrial and commercial applications.