VISHAY IRF840APBF N-Channel Power MOSFET, 500V, 8A, TO-220AB

The VISHAY IRF840APBF is a high-performance N-channel power MOSFET designed for robust and efficient power management in demanding industrial applications. It features a low gate charge design, which contributes to reduced switching losses and improved overall efficiency in circuits. A key strength of this component is its enhanced ruggedness, offering improved tolerance to gate stress, avalanche conditions, and dynamic dv/dt events, ensuring reliable operation under transient conditions.

This MOSFET is fully characterised for both capacitance and avalanche performance, with the effective output capacitance (Coss) specified for precise design calculations. It supports a gate-source voltage of up to ±30V, providing a good margin for safe drive circuit operation. Its primary application is in power conversion and management systems, where its combination of high voltage handling, current capacity, and switching performance is critical.

Key Specifications & Features

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 500 V
• Continuous Drain Current (Id): 8 A
• Drain-Source On-State Resistance (Rds(on)): 0.85 Ω (tested at 10V)
• Gate-Source Threshold Voltage (Max): 4 V
• Power Dissipation: 125 W
• Package / Case Style: TO-220AB
• Mounting Type: Through Hole
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C
• Special Features: Low gate charge, improved avalanche ruggedness, and characterised capacitance.

Encapsulated in the industry-standard TO-220AB package, this component is suitable for through-hole mounting on printed circuit boards (PCBs), facilitating easy assembly and providing a robust thermal path for heat dissipation when used with an appropriate heatsink. The VISHAY IRF840APBF represents a reliable choice for engineers designing switch-mode power supplies (SMPS), motor controllers,