VISHAY N Channel Power MOSFET 100V 1.3A 0.27ohm DIP

This VISHAY N Channel Power MOSFET is a third-generation HEXFET power MOSFET that combines fast switching, ruggedised device design, and low on-resistance. It provides designers with an efficient and reliable solution for power management applications.

The device features a machine-insertable DIP case style, which can be conveniently stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain acts as a thermal link to the mounting surface, facilitating power dissipation levels of up to 1W. It is designed for automatic insertion and end stacking, making it highly suitable for streamlined manufacturing processes.

With a continuous drain current of 1.3A and a drain source voltage of 100V, it is well-suited for a variety of switching applications. The through-hole mounting ensures a secure connection to the circuit board, while the 4-pin configuration allows for straightforward integration into existing designs.

Key Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175°C maximum operating temperature
• Easy to parallel
• Simple drive requirement