VISHAY N Channel Power MOSFET 1kV 6A 2 Ohm TO-247AC

This VISHAY N Channel Power MOSFET is a 1000V enhancement-mode device featuring a single configuration. As a third-generation Power MOSFET, it provides a reliable combination of fast switching, ruggedised device design, and low ON-resistance. It also features a greater creepage distance between pins, ensuring it meets the requirements of most safety specifications, making it well-suited for high-voltage environments where safety and reliability are critical.

Key Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching capability
• Ease of paralleling
• Simple drive requirements
• Isolated central mounting hole

Designed for robust performance, this through-hole mount transistor is ideal for demanding applications. The TO-247AC case style and isolated central mounting hole facilitate straightforward and secure installation onto printed circuit boards. With a continuous drain current of 6A, a maximum power dissipation of 180W, and a drain source on-state resistance of 2 ohm, it delivers efficient power management and control for industrial systems.