VISHAY N-Channel Power MOSFET, 30V 5.2A, SOT-23

The VISHAY N-Channel Power MOSFET is a high-performance TrenchFET® technology device, engineered for efficient power management in compact electronic designs. With a drain-source voltage (Vds) rating of 30V and a continuous drain current (Id) of 5.2A, it delivers robust switching capabilities for demanding applications. Its key strength lies in the exceptionally low drain-source on-state resistance (Rds(on)) of just 0.042 ohms, measured at a 4.5V test voltage, which minimises power loss and heat generation for improved overall system efficiency.

Encased in the industry-standard SOT-23 surface-mount package, this MOSFET is ideal for space-constrained PCB layouts. It features a maximum gate-source threshold voltage of 400mV and a power dissipation rating of 1.8W, supporting reliable operation in a wide range of circuits. Each device is 100% Rg tested, guaranteeing consistent performance and quality from Vishay, a leader in semiconductor manufacturing.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 5.2A
• Drain-Source On-State Resistance (Rds(on)): 0.042 ohms @ 4.5V
• Package: SOT-23 (Surface Mount)
• Power Dissipation: 1.8W
• Operating Temperature Max: 150°C
• Pin Count: 3 Pins

With its reliable performance and compact form factor, this power MOSFET is an essential component for modern, efficient power electronics.