VISHAY N Channel Power MOSFET, 500 V, 2.5 A, 3 ohm, TO-220AB

The VISHAY N Channel Power MOSFET is a third-generation device that provides an optimal combination of fast switching, ruggedised device design, and low on-resistance. This component is universally preferred for all commercial-industrial applications at power dissipation levels up to approximately 50W.

Featuring a dynamic dV/dt rating and repetitive avalanche rating, this MOSFET is built for robust performance. It offers a maximum operating temperature of 150°C, making it suitable for demanding environments. Additionally, the device is easy to parallel and has simple drive requirements, simplifying circuit design and integration.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 2.5A
• Drain Source On State Resistance: 3 ohm
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 40W
• Rds(on) Test Voltage: 10V
• Number of Pins: 3
• Transistor Case Style: TO-220AB
• Transistor Mounting: Through Hole

Physical Dimensions

• Height: 43 mm
• Width: 33 mm
• Depth: 15 mm
• Weight: 2 grams

With its through-hole mounting and compact TO-220AB package, this MOSFET is highly versatile for power management applications.