VISHAY P-Channel Power MOSFET, 100V, 28A, PowerPAK SO

The VISHAY SI7489DP-T1-GE3 is a high-performance P-channel TrenchFET® Power MOSFET, designed for efficient power management in switching applications. With a drain-source voltage rating of 100V and a continuous drain current of 28A, this MOSFET delivers reliable power handling and switching performance. Its very low drain-source on-state resistance of 0.041 ohm minimizes conduction losses, improving overall system efficiency.

This surface-mount device is housed in a space-saving PowerPAK SO package, making it ideal for compact PCB designs. The MOSFET is halogen-free according to IEC 61249-2-21, ensuring environmentally conscious manufacturing. It is designed for robust operation with a maximum power dissipation of 83W and an operating temperature range up to 150°C.

The device features a gate-source threshold voltage of up to 3V and is optimized for a gate drive voltage of 10V. With an 8-pin configuration, it offers a practical solution for various power control circuits, including load switching, power supply regulation, and DC-DC converters.

Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current: 28A
• Drain Source On-State Resistance (Rds(on)): 0.041 ohm
• Transistor Case Style: PowerPAK SO
• Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage (Max): 3V
• Power Dissipation: 83W
• Number of Pins: 8
• Operating Temperature (Max): 150°C
• Product Range: –
• Qualification: –
• MSL: –
• Weight: 0.238 grams
• Dimensions: 43mm x 33mm x 15mm