VISHAY P-Channel Power MOSFET 40V 16.1A SOIC

The VISHAY SI4401DDY-T1-GE3 is a robust P-channel enhancement-mode Power MOSFET, engineered for high-performance load switching and point-of-load (POL) applications. Built on advanced TrenchFET® technology, it delivers low on-state resistance for efficient power management.

This component is rigorously tested, with 100% Rg (gate resistance) and 100% UIS (unclamped inductive switching) testing ensuring consistent quality and reliability. It is constructed with halogen-free materials, adhering to modern environmental standards, and is designed to operate across a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial environments.

With a high continuous drain current and low power dissipation, this MOSFET is an excellent choice for designers seeking to optimise efficiency and thermal performance in compact surface-mount designs. Its SOIC package is ideal for space-constrained PCBs while providing effective thermal characteristics.

Key Specifications:

• Drain-Source Voltage (Vds): 40 V
• Continuous Drain Current (Id): 16.1 A
• Drain-Source On-State Resistance (Rds(on)): 0.015 Ω (tested at 4.5V)
• Gate-Source Threshold Voltage (Max): 1.2 V
• Power Dissipation: 6.3 W
• Package / Case: SOIC
• Mounting Type: Surface Mount
• Pin Count: 8 Pins
• Operating Temperature Range: -55°C to 150°C
• Technology: Halogen-free TrenchFET®