VISHAY P Channel Power MOSFET 40V 7.2A SOIC

The VISHAY P Channel Power MOSFET is a high-performance TrenchFET® device designed for efficient power management. Enclosed in an 8-pin SOIC package, this surface-mount transistor offers reliable switching capabilities with a drain-source voltage of 40V and a continuous drain current of 7.2A. Its low drain-source on-state resistance of 0.045ohm ensures minimal power loss and enhanced operational efficiency.

This MOSFET undergoes rigorous quality control, featuring 100% Rg testing and 100% UIS testing to guarantee consistent performance and robustness in demanding applications. The component operates effectively at a maximum temperature of 150°C, making it suitable for environments where thermal management is critical.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 7.2A
• Drain Source On State Resistance: 0.045ohm
• Gate Source Threshold Voltage Max: 1.2V
• Power Dissipation: 4.2W
• Rds(on) Test Voltage: 10V
• No. of Pins: 8
• Transistor Case Style: SOIC
• Transistor Mounting: Surface Mount

Ideal for modern electronics, this VISHAY MOSFET provides a dependable solution for power routing and switching tasks.