VISHAY SI2301CDS P-Channel Power MOSFET, 20V, 3.1A, SOT-23

The VISHAY SI2301CDS-T1-GE3 is a high-performance P-channel enhancement-mode Power MOSFET, part of the TrenchFET® family, designed for efficient load switching applications. This compact, surface-mount component offers a drain-source voltage (Vds) rating of 20V and a continuous drain current (Id) of 3.1A, making it suitable for managing power in a variety of compact electronic designs.

Key to its efficiency is a low drain-source on-state resistance (Rds(on)) of just 0.112ohm, tested at a gate-source voltage of 4.5V. This low resistance minimises power loss and heat generation, improving overall system efficiency and reliability. The device features a maximum gate-source threshold voltage of 400mV and can dissipate up to 1.6W of power.

Housed in a compact SOT-23 package with three pins, it is engineered for reliable operation across an industrial temperature range from -55°C to 150°C. The component is also manufactured to be halogen-free, adhering to modern environmental and safety standards. Its small form factor and surface-mount design make it ideal for space-constrained printed circuit board (PCB) layouts.

Primary Applications

This MOSFET is perfectly suited for power management tasks in industrial electronics, including load switching, power distribution, and battery management circuits. Its robust design ensures stable performance in demanding environments.