VISHAY SI2309CDS P-Channel Power MOSFET, 60V, 1.6A, SOT-23

The VISHAY SI2309CDS-T1-GE3 is a high-performance P-Channel Power MOSFET designed for efficient switching and signal processing in compact, modern electronics. Built on advanced TrenchFET® power MOSFET technology, this component delivers robust performance with a low on-state resistance of just 0.345 ohm, minimising power loss and heat generation for improved system efficiency.

With a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 1.6A, it is well-suited for managing power in a variety of low to medium-power applications. Its compact SOT-23 surface-mount package makes it ideal for space-constrained PCB designs, allowing for high-density board layouts without compromising on performance or reliability.

This halogen-free MOSFET is engineered for durability, capable of operating at temperatures up to 150°C and dissipating up to 1.7W of power. Its key specifications ensure stable operation, including a gate-source threshold voltage of 1V and a test voltage for Rds(on) of 10V. The component's design prioritises both electrical performance and environmental considerations, making it a reliable choice for audio and signal processing circuits where clarity and efficiency are paramount.

Key Features & Specifications

• Technology: Advanced TrenchFET® power MOSFET.
• Channel Type: P-Channel.
• Drain-Source Voltage (Vds): 60V.
• Continuous Drain Current (Id): 1.6A.
• Drain-Source On-State Resistance (Rds(on)): 0.345 ohm @ 10V.
• Package: SOT-23, 3-pin.
• Mounting: Surface Mount.
• Power Dissipation: 1.7W.
• Max Operating Temperature: 150°C.
• Gate-Source Threshold Voltage: 1V.
• Dimensions (L x W x H): 33mm x 15mm x 43mm.
• Weight: 0.068 grams.
• Environmental: Halogen-free construction.