VISHAY SI2319CDS-T1-GE3 P-Channel MOSFET 40V 4.4A SOT-23

The VISHAY SI2319CDS-T1-GE3 is a high-performance P-channel TrenchFET® Power MOSFET designed for efficient power management in space-constrained applications. With a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 4.4A, this MOSFET delivers reliable switching performance for industrial and consumer electronics.

Its SOT-23 surface-mount package ensures compact, low-profile integration on PCBs, while the maximum on-state resistance (Rds(on)) of 0.077 ohm at a 10V gate test voltage minimizes conduction losses, enhancing overall energy efficiency. The device supports a gate-source voltage of ±20V and features a maximum gate-source threshold voltage of 1.2V, making it easy to drive from standard logic levels.

Designed for robustness, the SI2319CDS-T1-GE3 operates over a wide temperature range, with a maximum junction temperature of 150°C, ensuring stability in demanding environments. It dissipates up to 1.25W of power, and its 3-pin configuration simplifies circuit design. The product is compliant with the latest SVHC regulations (no SVHC as of 04-Feb-2026), meeting modern environmental standards.

Key Features:

• P-Channel TrenchFET® technology for high efficiency
• 40V drain-source voltage rating
• 4.4A continuous drain current capability
• Low 0.077 ohm on-state resistance (at Vgs = 10V)
• SOT-23 package for space-saving, surface-mount assembly
• ±20V gate-source voltage rating
• 1.2V maximum gate threshold voltage for easy drive
• 1.25W power dissipation capability
• 150°C maximum operating temperature for robust thermal performance

This MOSFET is ideal for load switching, power management, and DC-DC converter circuits where high efficiency and compact size are critical.