VISHAY SI2323CDS P-Channel Power MOSFET, 20V 6A, SOT-23

The VISHAY SI2323CDS-T1-GE3 is a P-channel enhancement-mode Power MOSFET utilising advanced TrenchFET® technology. Designed as a robust load switch, it is ideal for demanding power management and DC-to-DC converter applications, offering high efficiency and reliability in a compact surface-mount package.

This component is characterised by a low drain-source on-state resistance (Rds(on)) of just 0.039 ohms, which minimises power loss and heat generation during operation. With a continuous drain current rating of 6A and a drain-source voltage of 20V, it provides a solid performance foundation for a variety of circuit designs.

Key Features & Benefits

• TrenchFET® Technology: Delivers superior switching performance and low on-resistance.
• Low Rds(on): Maximises efficiency by reducing conduction losses.
• Wide Temperature Range: Operates reliably from -55°C to 150°C, suitable for industrial environments.
• Halogen-Free: Manufactured with environmentally friendly materials.
• 100% Rg Tested: Ensures consistent gate resistance and switching characteristics across every unit.
• Compact SOT-23 Package: The surface-mount design saves valuable board space in modern electronic assemblies.

Its high-performance specifications, including a maximum gate-source threshold voltage of 400mV and a power dissipation of 2.5W, make it an excellent choice for designers seeking a reliable and efficient P-channel MOSFET solution.