Vishay SI2369DS-T1-GE3 P-Channel MOSFET, 30V 7.6A, SOT-23

The Vishay SI2369DS-T1-GE3 is a high-performance P-Channel Power MOSFET designed for efficient power management in a wide range of applications. Operating with a 30V drain-source voltage and a continuous drain current of 7.6A, this MOSFET delivers reliable switching performance in a compact SOT-23 package for surface mount assembly.

Built on advanced Trench MOSFET® technology, it offers a low drain-source on-state resistance of just 0.029 ohm, minimising conduction losses and improving overall efficiency. The device supports a ±20V gate-source voltage and is 100% Rg tested, ensuring consistent and reliable operation. Additionally, it is halogen-free, making it an environmentally conscious choice for modern electronic designs.

Key Features

• P-Channel enhancement mode MOSFET
• 30V drain-source voltage (Vds)
• 7.6A continuous drain current (Id)
• Low on-state resistance: 0.029 ohm
• ±20V gate-source voltage rating
• 2.5W power dissipation
• Operating temperature up to 150°C
• SOT-23 package with 3 pins
• Surface mount for automated assembly
• Trench MOSFET® technology
• 100% Rg tested
• Halogen-free

This MOSFET is ideal for load switching, power management, and signal processing circuits where space is at a premium and performance is critical. Its surface mount footprint and low thermal resistance make it suitable for compact, high-density PCB designs.