Vishay SI2374DS N-Channel Power MOSFET, SOT-23, 20V 5.9A

The Vishay SI2374DS-T1-GE3 is a high-performance, N-Channel TrenchFET® power MOSFET designed for efficient power management in compact, surface-mount applications. Housed in a robust SOT-23 package, this transistor offers a low drain-source on-state resistance (Rds(on)) of just 0.03 ohm, minimising power loss and heat generation for improved system efficiency.

With a drain-source voltage (Vds) rating of 20V and a continuous drain current (Id) of 5.9A, it provides reliable switching capabilities for moderate-power circuits. Its low gate-source threshold voltage makes it suitable for use with low-voltage control signals, enhancing design flexibility. This 100% tested component ensures consistent performance and reliability in demanding environments.

Key Features & Specifications

• Technology: Advanced TrenchFET® power MOSFET construction.
• Channel Type: N-Channel for high-side switching applications.
• Voltage Rating: Drain-Source Voltage (Vds): 20V.
• Current Handling: Continuous Drain Current (Id): 5.9A.
• Low On-Resistance: Drain-Source On-State Resistance (Rds(on)): 0.03 ohm at 4.5V test voltage.
• Package: Compact SOT-23 surface-mount device (SMD) case style.
• Pin Count: 3 pins for straightforward PCB integration.
• Power Rating: Maximum power dissipation of 1.7W.
• Operating Temperature: Can operate at temperatures up to 150°C.
• Mounting: Designed for automated surface-mount technology (SMT) assembly.

Ideal for designers seeking a robust, space-saving solution for power switching, the Vishay SI2374DS delivers a balance of performance, size, and reliability for modern electronic designs.