VISHAY SI4946BEY TrenchFET® Power MOSFET Dual N Channel 60V SOIC

The SI4946BEY from VISHAY is a high-performance, dual N-channel TrenchFET® power MOSFET designed for demanding power management applications. Housed in a compact surface-mount SOIC package, this MOSFET leverages advanced LITTLE FOOT® technology, which adapts integrated circuit and small-signal packaging to deliver the heat transfer capabilities required for effective power handling. This component is ideal for space-constrained designs where efficiency and thermal performance are critical.

This dual MOSFET features a 60V drain-source voltage rating and a continuous drain current of 6.5A per channel. The low on-state resistance of just 0.033 ohms minimises conduction losses, improving overall system efficiency. Each channel can dissipate up to 2.4W, and the device operates reliably at junction temperatures up to 175°C, ensuring robust performance in thermally challenging environments. The component is halogen-free, complying with IEC 61249-2-21 standards, and is 100% Rg-tested for quality assurance.

Key Features

• Dual N-channel configuration
• TrenchFET® technology for low on-state resistance
• 60V drain-source voltage rating
• 6.5A continuous drain current per channel
• Low on-state resistance of 0.033 ohms
• SOIC surface-mount package (8 pins)
• 2.4W power dissipation per channel
• Maximum junction temperature of 175°C
• Halogen-free per IEC 61249-2-21

Product Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 6.5A
• On-State Resistance (Rds(on)): 0.033 ohms
• Transistor Case Style: SOIC
• Number of Pins: 8
• Power Dissipation per Channel: 2.4W

The SI4946BEY is a reliable and efficient solution for power switching and management circuits, delivering the performance and thermal characteristics needed for advanced electronic designs.