VISHAY SI7461DP P-Channel Power MOSFET, -60V, 8.6A

The VISHAY SI7461DP-T1-GE3 is a high-performance P-channel TrenchFET® power MOSFET, engineered for demanding power management applications. It features a low drain-source on-state resistance of just 0.0145 ohm at a 10V gate drive, enabling highly efficient power switching with minimal conduction losses.

Housed in the compact PowerPAK® SO package, this device offers an excellent balance of small footprint, low thermal resistance, and a slim profile of only 1.07mm, making it ideal for space-constrained designs. The halogen-free construction complies with the IEC 61249-2-21 standard, supporting environmentally conscious manufacturing.

This MOSFET is specified for a continuous drain current of 8.6A and a drain-source voltage of -60V. With a maximum power dissipation of 1.9W and an operating temperature range extending up to 150°C, it is built for robust and reliable operation in challenging environments.

A key application for this component is as an active clamp in intermediate DC/DC power supplies, where its fast switching characteristics and low RDS(on) contribute to improved overall system efficiency and stability. Its surface-mount design facilitates automated assembly processes for high-volume production.

Key Specifications:

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): -60V
• Continuous Drain Current (Id): 8.6A
• Drain-Source On-State Resistance (RDS(on)): 0.0145 ohm @ 10V
• Gate-Source Threshold Voltage (Max): 3V
• Maximum Power Dissipation: 1.9W
• Package Type: PowerPAK SO (8-pin)
• Mounting Style: Surface Mount
• Maximum Operating Temperature: 150°C
• Package Height: 1.07mm
• Compliance: Halogen-free (IEC 61249-2-21)