VISHAY SMD P-Channel Power MOSFET, 20V, 5.9A, SOT-23

The VISHAY SMD P-Channel Power MOSFET is a high-performance semiconductor device engineered for efficient power management in modern, space-constrained applications. Built on the advanced TrenchFET® technology platform, it delivers low on-state resistance for minimal power loss and high current-handling capability in a compact SOT-23 surface-mount package.

This component is 100% Rg tested to ensure consistent performance and reliability, while the built-in ESD protection offers a typical electrostatic discharge performance of 3000V, safeguarding the device during handling and assembly.

Key Features & Applications

Ideal for portable and consumer electronics, this MOSFET excels in roles such as load switches and DC/DC converters, where efficient power switching and compact size are paramount. Its robust design supports a wide operating temperature range, making it suitable for demanding environments.

Technical Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 5.9A
• Drain-Source On-State Resistance (Rds(on)): 0.032 ohm (tested at 4.5V)
• Gate-Source Threshold Voltage (Max): 1V
• Maximum Power Dissipation: 1.7W
• Package / Case Style: SOT-23 (Surface Mount)
• Number of Pins: 3
• Maximum Operating Temperature: 150°C
• Product Technology: TrenchFET® Power MOSFET

This reliable VISHAY MOSFET provides engineers and designers with a trusted solution for enhancing power efficiency and circuit protection in a multitude of electronic designs.