VISHAY SMD P-Channel Power MOSFET, 30V, 7.5A, SOT-23

The VISHAY SMD P-Channel Power MOSFET is a high-performance semiconductor device from the advanced TrenchFET® Gen IV product range. It is designed for efficient power management and switching applications, offering a robust combination of voltage, current handling, and low on-state resistance.

This surface-mount component features a P-Channel type, with a Drain-Source Voltage (Vds) rating of 30V and a Continuous Drain Current (Id) of 7.5A. A key specification is its low Drain-Source On-State Resistance (Rds(on)) of just 0.0227 ohm when tested at 10V, which minimises power loss and heat generation during operation, enhancing overall system efficiency.

Housed in a compact SOT-23 case with 3 pins, it is ideal for space-constrained PCB designs. The device offers a Power Dissipation of 2.5W and can operate at a maximum temperature of 150°C, ensuring reliability in demanding environments. Each unit is rigorously 100% Rg and UIS tested, guaranteeing consistent performance and quality.

Its small footprint, combined with high current capability and low resistance, makes it a versatile choice for a wide array of modern electronic designs where precise power control and compact sizing are critical.