VISHAY SUD50P04-08-GE3 P-Channel Power MOSFET 40V 50A TO-252

The VISHAY SUD50P04-08-GE3 is a high-performance P-Channel power MOSFET designed for demanding electronic applications. Encased in a compact TO-252 (DPAK) surface-mount package, this device offers an excellent blend of power handling, efficiency, and reliability, making it a top choice for modern power management designs.

Engineered with advanced TrenchFET technology, this MOSFET delivers a low on-state resistance (Rds(on)) of just 9.7 milliohms at a gate-source voltage of -4.5V, minimising conduction losses and improving overall system efficiency. It is capable of handling a continuous drain current (Id) of -50A and a drain-source voltage (Vds) of -40V, with a robust power dissipation rating of 73.5W.

Key Features & Benefits

• High Current Capacity: Supports up to 50A continuous drain current for power-hungry applications.
• Low On-Resistance: An Rds(on) as low as 9.7mΩ ensures minimal voltage drop and power loss, leading to cooler operation and higher efficiency.
• Robust Voltage Ratings: Rated for -40V drain-source and ±20V gate-source voltages, providing a solid safety margin in various circuits.
• Wide Temperature Range: Operational junction temperature spans from -55°C to 150°C, guaranteeing performance in harsh environmental conditions.
• Surface-Mount Design: The TO-252 package is ideal for automated assembly processes, saving space on printed circuit boards (PCBs).

This versatile component is an essential building block for engineers designing efficient and compact power solutions, where switching performance and thermal management are critical.