VISHAY SUD50P06-15-GE3 P-Channel Power MOSFET, 60V 50A, TO-252

The VISHAY SUD50P06-15-GE3 is a robust P-channel TrenchFET® Power MOSFET engineered for high-efficiency power management and load switching applications. This advanced component features a low drain-source on-state resistance (Rds(on)) of just 0.015 ohm at 10V, which minimises power loss and heat generation, making it ideal for demanding industrial environments where performance and reliability are critical.

Housed in a compact and industry-standard TO-252 (DPAK) surface-mount package, this MOSFET is designed for streamlined PCB integration and efficient thermal management. With a maximum continuous drain current rating of 50A and a drain-source voltage (Vds) of 60V, it provides the necessary headroom for a wide array of power control circuits. The device can handle a gate-source voltage of ±20V, offering flexibility in drive circuit design, and has a maximum power dissipation of 2.5W.

Its primary application is as a load switch, where its low Rds(on) ensures minimal voltage drop when fully activated. This makes it perfectly suited for controlling high-current loads in power supplies, motor drives, battery management systems, and industrial automation equipment. The component is rated for operation at temperatures up to 150°C, ensuring stable performance even under strenuous thermal conditions.

Key Specifications:

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 50A
• Drain-Source On-State Resistance (Rds(on)): 0.015 ohm @ 10V
• Gate-Source Voltage (Vgs): ±20V
• Gate Threshold Voltage Max: 3V
• Maximum Power Dissipation: 2.5W
• Package Type: TO-252 (DPAK)
• Mounting Type: Surface Mount
• Operating Temperature Max: 150°C
• Dimensions: 33mm (Width) x 43mm (Height) x 15mm (Depth)
• Weight: 0.521 grams

By integrating this high-performance VIS