VISHAY SUM110P06-07L-E3 P-Channel Power MOSFET, 60V 110A, TO-263 (D2PAK)

The VISHAY SUM110P06-07L-E3 is a high-performance P-channel Power MOSFET designed using advanced TrenchFET® technology. This component is engineered for demanding industrial applications, offering robust performance and high-efficiency power switching with a continuous drain current rating of 110A and a drain-source voltage of 60V.

A key feature of this MOSFET is its exceptionally low on-state resistance (Rds(on)) of just 6900 µΩ, which minimises power loss and heat generation during operation. It is housed in a TO-263 (D2PAK) surface-mount package, providing a compact footprint suitable for automated assembly processes while ensuring effective thermal management.

Performance and Reliability

Built for reliability, this device supports a maximum operating junction temperature of 175°C. Its thermal performance is characterised by a junction-to-case thermal resistance of 0.4°C/W and a junction-to-ambient thermal resistance of 40°C/W, allowing for efficient heat dissipation in properly designed circuits. It operates with a gate-source voltage of ±20V and features a maximum gate threshold voltage of 3V.

Specifications at a Glance

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 110 A
• Drain-Source On-State Resistance (Rds(on)): 6900 µΩ @ 10V
• Package: TO-263 (D2PAK), Surface Mount
• Power Dissipation: 3.75 W
• Operating Temperature Max: 175°C
• Pin Count: 3 Pins

With its combination of high current handling, low resistance, and industrial-grade construction, the SUM110P06-07L-E3 is an ideal choice for power supply units, motor control, DC-DC converters, and other high-power switching circuits where efficiency and space savings are critical.