VISHAY TrenchFET P-Channel MOSFET 60V 120A, TO-263

The VISHAY TrenchFET® P-Channel Power MOSFET delivers high-efficiency switching in a compact surface-mount package. Engineered for demanding power applications, this device features a continuous drain current of up to 120A and a low on-state resistance of just 0.0056Ω, minimising conduction losses and improving thermal performance.

Housed in a TO-263 (D2PAK) package with low thermal resistance, the MOSFET ensures effective heat dissipation, enabling reliable operation up to a maximum junction temperature of 175°C. The device is 100% Rg and UIS tested, guaranteeing robust avalanche ruggedness and consistent gate charge performance for reliable operation in harsh environments.

Key Benefits

• High Current Capability: Supports up to 120A continuous drain current for heavy-load switching.
• Low On-Resistance: 0.0056Ω (typical) ensures minimal power loss and improved efficiency.
• Automotive Qualified: AEC-Q101 qualified for demanding automotive and industrial applications.
• Surface Mount Design: Ideal for automated assembly, saving board space and reducing manufacturing costs.

With a gate-source threshold voltage of 2V and a power dissipation rating of 375W, this MOSFET is well-suited for high-power circuits such as DC-DC converters, motor controllers, and power supplies. The 3-pin TO-263 package provides excellent thermal and electrical performance, making it a reliable choice for your power management needs.