Diodes Inc. P-Channel Power MOSFET, 20V 900mA, SOT-23

The Diodes Inc. ZXM61P02F is a P-channel enhancement-mode power MOSFET designed for high-efficiency switching applications. It features a unique internal structure that combines the benefits of a low on-state resistance with a fast switching speed, optimising performance in power management circuits.

Constructed with a moulded plastic case and solderable matte tin-finish terminals compliant with the MIL-STD-202 standard, it ensures reliable solderability and durability. The device is engineered with a low threshold voltage and requires low gate drive, simplifying circuit design and reducing power consumption in control stages.

As a halogen-free, green device, it meets modern environmental standards. It is qualified to the stringent AEC-Q101 automotive standards, guaranteeing high reliability for demanding applications. The component has a moisture sensitivity level (MSL) of 1 per J-STD-020, indicating unlimited floor life, and carries a UL94V-0 flammability rating for enhanced safety.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 20 V
• Continuous Drain Current (Id): 900 mA
• Drain-Source On-State Resistance (Rds(on)): 0.6 ohm
• Test Voltage for Rds(on): 4.5 V
• Gate-Source Threshold Voltage (Max): 700 mV
• Maximum Power Dissipation: 625 mW
• Package / Case Style: SOT-23
• Mounting Type: Surface Mount
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C

This robust and efficient MOSFET is an excellent choice for designers seeking reliable performance in compact, surface-mount designs.