Diodes Inc. ZVN3306A N-Channel Power MOSFET, 60V 270mA, TO-226AA

The Diodes Inc. ZVN3306A is an N-channel enhancement-mode vertical DMOSFET, designed for efficient power switching and management in industrial applications. This robust transistor offers a high drain-source voltage rating of 60V and a continuous drain current of 270mA, making it suitable for controlling moderate power loads with precision.

A key feature is its low on-state resistance (Rds(on)) of just 5 ohms, tested at 10V, which minimises power loss and heat generation during operation, enhancing overall system efficiency. The device has a maximum gate-source threshold voltage of 2.4V, ensuring reliable switching characteristics. With a power dissipation rating of 625mW, it can handle significant thermal loads within its operating parameters.

Housed in a standard TO-226AA through-hole package, it is ideal for prototyping, breadboarding, and integration into permanent printed circuit board (PCB) designs. The component is rated for a wide operating temperature range up to 150°C, providing reliability in demanding environments. It is supplied with an MSL 1 (Moisture Sensitivity Level) rating, meaning it has an unlimited floor life at factory conditions with no special dry storage requirements.

Specifications Overview

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 270mA
• Drain-Source On-State Resistance (Rds(on)): 5 ohm (at 10V)
• Gate-Source Threshold Voltage Max: 2.4V
• Power Dissipation: 625mW
• Package / Case: TO-226AA (Through-Hole)
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C
• Moisture Sensitivity Level (MSL): MSL 1 - Unlimited

This reliable MOSFET is a fundamental component for designers and engineers building power management circuits, motor drivers, load switches, and various industrial control systems.