Infineon BSP613P Power MOSFET, P-Channel, 60V, 2.9A, SOT-223

The Infineon BSP613P H6327 is a robust -60V P-channel Power MOSFET engineered to deliver exceptional performance and reliability. Designed to meet the highest quality standards, it excels in critical parameters for power system design, including low on-state resistance and excellent Figure of Merit characteristics, making it a superior choice for efficiency-driven applications.

This enhancement mode MOSFET features Avalanche rated robustness and dv/dt rated capabilities, ensuring high resilience against voltage spikes and fast transients. It is fully AEC-Q101 qualified, certifying its suitability for the demanding environment of automotive electronics where reliability under harsh conditions is non-negotiable.

Key Applications

This versatile component is ideal for a wide range of power management and control tasks. Its high-performance characteristics make it perfect for automotive control units, consumer electronics power supplies, advanced power management systems, and precise motor drive control circuits.

Technical Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): -60 V
• Continuous Drain Current (Id): 2.9 A
• Drain-Source On-State Resistance (Rds(on)): 0.13 Ω (tested at 10V)
• Gate-Source Threshold Voltage (Max): 3 V
• Maximum Power Dissipation: 1.8 W
• Package / Case Style: SOT-223
• Mounting Type: Surface Mount (SMD)
• Number of Pins: 4
• Maximum Operating Temperature: +150 °C
• Package Dimensions (Height x Width x Depth): 43 mm x 33 mm x 15 mm
• Weight: 3.629 grams

Offering a compact SOT-223 footprint, the Infineon BSP613P provides an optimal balance of high current handling, low resistance, and thermal performance in a space-saving surface-mount package.