Infineon IRFB3806PBF N-Channel Power MOSFET 60V 43A TO-220AB

The Infineon IRFB3806PBF is a high-performance HEXFET® N-channel Power MOSFET engineered for demanding power management applications. This device offers improved gate, avalanche, and dynamic dV/dt ruggedness, ensuring reliable operation in high-stress environments. It is specifically designed for high-efficiency synchronous rectification in switch-mode power supplies (SMPS), hard-switched circuits, and high-frequency circuits.

This MOSFET features fully characterised capacitance and avalanche SOA (Safe Operating Area), along with enhanced body diode dV/dt and di/dt capability, making it a robust choice for industrial and power management systems. The device is housed in a TO-220AB package and is designed for through-hole mounting, offering easy integration into a wide range of circuit boards.

Key Electrical Characteristics:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 43A
• Drain Source On-State Resistance: 0.0158Ω (0.0126Ω per original title)
• Rds(on) Test Voltage: 20V
• Gate Source Threshold Voltage (Max): 4V
• Power Dissipation: 71W
• No. of Pins: 3
• Maximum Operating Temperature: 175°C
• Transistor Case Style: TO-220AB
• Mounting Type: Through Hole

The IRFB3806PBF is ideal for engineers and designers seeking a reliable power MOSFET with high efficiency and ruggedness. Its fully characterised performance parameters allow for precise circuit design, while the enhanced body diode and avalanche capabilities ensure durability in challenging conditions. Whether used in power supplies, industrial equipment, or high-frequency circuits, this MOSFET delivers consistent, high-quality performance.

Physical Specifications:

• Height: 43mm
• Width: 33mm
• Depth: 15mm
• Weight: 136.078g

With its superior electrical characteristics and robust construction, the Infineon IRFB3806P