Infineon IRFP4368PBF Power MOSFET, N-Channel, 75V, 350A, 1850µΩ, TO-247AC

The Infineon IRFP4368PBF is a high-performance 75V, single N-channel Power MOSFET, engineered using advanced HEXFET® technology. It delivers exceptional efficiency by combining extremely low on-resistance per silicon area with fast switching characteristics, making it an optimal choice for demanding power management applications.

Designed with Trench MOSFET technology, this component offers superior ruggedness, including improved gate, avalanche, and dynamic dv/dt capabilities. It features fully characterised capacitance and avalanche safe operating area (SOA), alongside an enhanced body diode with excellent dV/dt and dI/dt performance for increased reliability in harsh switching environments.

Primary Applications

This MOSFET is ideally suited for high-efficiency synchronous rectification in switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its fast switching and robust construction also make it perfect for high-speed power switching, hard-switched circuits, and high-frequency designs where performance and durability are critical.

Key Specifications & Features

• Technology: Utilises Infineon's HEXFET® and Trench MOSFET technology for low Rds(on) and fast switching.
• Robust Design: Engineered for improved gate, avalanche, and dynamic dv/dt ruggedness.
• Enhanced Diode: Features an enhanced body diode with superior dV/dt and dI/dt capability.
• Characterised Performance: Comes with fully characterised capacitance and avalanche SOA data.
• Package: Housed in a standard TO-247AC through-hole package for easy mounting and excellent thermal performance.
• Thermal Management: Capable of dissipating up to 520W, supported by a maximum operating temperature of 175°C.

With its combination of high current handling, low resistance, and proven ruggedness, the IRFP4368PBF is a reliable and efficient solution for the