Infineon SPA20N60C3 N-Channel Power MOSFET, 650V, 20.7A, TO-220AB

The Infineon SPA20N60C3 is a high-performance N-channel CoolMOS™ Power MOSFET designed for efficient and reliable power conversion. Part of the latest state-of-the-art generation of high-voltage components, it delivers a significant reduction in conduction, switching, and driving losses compared to traditional solutions. This enables the creation of superior power supplies that are more efficient, more compact, lighter, and run cooler than ever before.

A standout feature is its remarkably low specific on-state resistance, which contributes to outstanding power density and high efficiency in demanding applications. The component also boasts very low energy storage in its output capacitance (Eoss) at 400V and a low gate charge (Qg), further enhancing switching performance and thermal management.

This MOSFET is engineered for high reliability and is easy to integrate into designs, making it a robust choice for advanced electronic systems. Its robust TO-220AB through-hole package ensures good thermal performance and straightforward mounting on printed circuit boards (PCBs).

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 650 V
• Continuous Drain Current (Id): 20.7 A
• Drain-Source On-State Resistance (Rds(on)): 0.16 Ω (tested at 10V)
• Power Dissipation: 34.5 W
• Package Type: TO-220AB
• Mounting Style: Through Hole
• Number of Pins: 3
• Maximum Operating Temperature: 150°C

With its combination of high efficiency, power density, and reliability, the Infineon SPA20N60C3 is an excellent choice for engineers seeking to optimise their power management designs.