ONSEMI BUZ11 N-Channel Power MOSFET, 50V 30A, TO-220AB

The ONSEMI BUZ11 is a robust N-channel Power MOSFET designed for efficient and high-speed power switching. With a drain-source voltage rating of 50V and a continuous drain current of 30A, it delivers reliable performance in demanding circuits. Its low drain-source on-state resistance of 0.04ohm minimises power loss and heat generation, enhancing overall system efficiency.

This MOSFET features nanosecond switching speeds and a fast 170ns fall time, making it ideal for applications requiring rapid switching. Its high input impedance allows for easy direct drive from integrated circuits, simplifying design and reducing the need for additional driver components. The linear transfer characteristics contribute to predictable and stable performance across its operating range.

Housed in a standard TO-220AB package, it is suited for through-hole mounting, offering a familiar and easy-to-use form factor for prototyping and production. With a high power dissipation rating of 75W and a maximum operating temperature of 150°C, it is built to handle significant thermal loads in industrial environments.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 50V
• Continuous Drain Current (Id): 30A
• Drain-Source On-State Resistance (Rds(on)): 0.04ohm
• Fall Time: 170ns
• Gate-Source Threshold Voltage (Max): 3V
• Power Dissipation: 75W
• Package: TO-220AB, Through-Hole
• Number of Pins: 3
• Operating Temperature Max: 150°C

A versatile component, the BUZ11 is suitable for a wide array of power management and control tasks.