ONSEMI FDS4935BZ Dual P-Channel MOSFET, SOIC, 6.9A, 30V

The ONSEMI FDS4935BZ is a high-performance dual P-channel PowerTrench® MOSFET, specifically engineered to minimise on-state resistance and maintain low gate charge for superior switching performance. This medium voltage power MOSFET is optimised for power switches, combining a small gate charge (QG), small reverse recovery charge (Qrr), and a soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies.

Utilising a shielded-gate structure that provides charge balance, this advanced technology achieves a figure of merit (FOM = QG x RDS(ON)) that is 66% lower than previous generation devices. The soft body diode performance helps eliminate the need for snubber circuits or higher voltage rating MOSFETs, as it minimises undesirable voltage spikes in synchronous rectification. This product is suitable for a wide range of general applications.

Key Features

• Extended VGSS range (-25V) for battery applications
• HBM ESD protection level of ±3.8kV typical
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability

Specifications

• Channel Type: P-Channel
• Drain Source Voltage (P Channel): 30V
• Continuous Drain Current (P Channel): 6.9A
• Drain Source On-State Resistance (P Channel): 0.022Ω
• Transistor Case Style: SOIC
• No. of Pins: 8
• Power Dissipation (P Channel): 1.6W
• Operating Temperature Max: 150°C

The FDS4935BZ is ideal for power management and switching applications where efficiency and reliability are critical. Its compact SOIC package and robust design make it a versatile choice for engineers.