STMicroelectronics N-Channel Power MOSFET, 100V 26A, TO-220

The STMicroelectronics N-Channel Power MOSFET is a high-performance semiconductor component designed for demanding switching applications. With a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) of 26A, it delivers robust power handling in a compact TO-220 package. Its exceptionally low on-state resistance (Rds(on)) of just 0.055Ω minimises power loss and heat generation, enhancing overall system efficiency.

This through-hole mount device is engineered for reliability, featuring a maximum power dissipation of 85W and an operating temperature range extending up to 175°C. The gate-source threshold voltage is a maximum of 3V, making it compatible with standard logic-level drive circuits. Its robust three-pin TO-220 case style provides excellent thermal performance, allowing for effective heat sinking when required.

Key Applications

This MOSFET is ideal for a wide range of power management and conversion tasks. Its specifications make it suitable for use in switch-mode power supplies (SMPS), motor control circuits, DC-DC converters, and high-current switching applications in industrial equipment, automotive systems, and consumer electronics.

Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 26A
• Drain-Source On-State Resistance (Rds(on)): 0.055Ω @ 10V
• Gate-Source Threshold Voltage (Max): 3V
• Maximum Power Dissipation: 85W
• Package / Case: TO-220
• Mounting Type: Through Hole
• Number of Pins: 3
• Maximum Operating Temperature: +175°C
• Package Dimensions: 15mm (Depth) x 33mm (Width) x 43mm (Height)