TEXAS INSTRUMENTS N-Channel Power MOSFET, 100V, 50A, VSON-8

The TEXAS INSTRUMENTS N-Channel Power MOSFET is a high-performance, surface-mount power semiconductor designed for demanding switching applications. With a robust 100V drain-source voltage (Vds) rating and a continuous drain current (Id) of 50A, it is capable of handling significant power in a compact package. Its exceptionally low drain-source on-state resistance (Rds(on)) of just 0.0145ohm at a 10V gate drive ensures minimal conduction losses, leading to higher efficiency and reduced heat generation in your circuit.

Housed in a space-saving VSON-8 case, this MOSFET is ideal for modern, high-density PCB designs. It features a maximum gate-source threshold voltage of 3V, making it compatible with standard logic-level drive circuits. With a high power dissipation rating of 83W and an extended operating temperature range up to 150°C, this component is built for reliability in challenging environments, from power supplies and motor controllers to DC-DC converters and battery management systems.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 50A
• Drain-Source On-State Resistance (Rds(on)): 0.0145 Ω (at Vgs=10V)
• Gate-Source Threshold Voltage (Vgs(th) Max): 3V
• Power Dissipation: 83W
• Package / Case Style: VSON (Very-thin Small Outline No-lead)
• Mounting Type: Surface Mount
• Number of Pins: 8
• Maximum Operating Temperature: +150°C
• Dimensions: 33mm (Width) x 43mm (Length) x 15mm (Height)