
High-performance 200V, 30A N-Channel Power MOSFET in TO-247AC package. Low on-resistance, fast switching, rugged design.
The VISHAY IRFP250PBF is a third-generation N-Channel Power MOSFET, engineered to deliver a superior combination of fast switching, a rugged device design, and low on-resistance. This 200V, 30A MOSFET is optimised for demanding power management applications, ensuring reliable and efficient performance.
Key features include a dynamic dV/dt rating for enhanced robustness, repetitive avalanche rating for high-energy pulse handling, and easy parallel capability to scale current requirements. The simple drive requirement simplifies circuit design, while the isolated central mounting hole facilitates secure and straightforward installation.
This through-hole device is presented in a TO-247AC package, offering excellent thermal performance and mechanical stability. With a low drain-source on-state resistance of just 0.085 ohm (at Vgs = 10V), it minimises conduction losses, improving overall system efficiency. The device supports a continuous drain current of 30A and can dissipate up to 180W, making it suitable for high-power switching circuits.
The MOSFET operates over a wide temperature range, up to a maximum junction temperature of 150°C, ensuring dependable operation under strenuous conditions. With three pins and a gate-source threshold voltage of 4V, the IRFP250PBF integrates seamlessly into a variety of power conversion and control topologies, offering a reliable and high-performance solution for your power management needs.
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