VISHAY TrenchFET® P Channel Power MOSFET 40V 120A

The VISHAY TrenchFET® P-Channel Power MOSFET is a high-performance surface-mount component designed for demanding power management applications. Engineered with advanced trench technology, it delivers exceptionally low on-state resistance of just 0.0025 Ohms (3000µΩ), minimising power loss and heat generation for superior efficiency.

This MOSFET is rated for a continuous drain current of 120A and a drain-source voltage of 40V, making it a robust solution for high-current switching. With a maximum power dissipation of 375W and an operating temperature up to 175°C, it is built to handle rigorous conditions in compact spaces. The TO-263 (D2PAK) package offers low thermal resistance, ensuring effective heat dissipation and reliable thermal performance.

Key Features & Specifications

• Technology: Advanced TrenchFET® power MOSFET construction.
• Package: Industry-standard TO-263 (D2PAK) surface-mount package.
• Electrical Ratings: 40V Drain-Source Voltage (Vds), 120A Continuous Drain Current (Id).
• Low Resistance: Ultra-low Drain-Source On-State Resistance (Rds(on)) of 0.0025 Ohms at 10V.
• Robust Design: 100% tested for gate resistance (Rg) and Unclamped Inductive Switching (UIS).
• High-Temperature Operation: Suitable for environments up to 175°C.
• Industry Qualification: AEC-Q101 qualified, ensuring reliability for automotive and other demanding applications.

Ideal for DC-DC converters, motor control, power supply units, and battery management systems, this component combines high power density with proven reliability in a compact form factor.