The **Genesic Silicon Carbide Schottky Diode MPS Single 1.2kV 1A** is a surface-mount component designed for efficient, reliable operation in demanding power applications. Its single-diode configuration handles a repetitive peak reverse voltage of 1.2 kV with an average forward current of 1 A, making it suitable for high-voltage circuits.

**Overview**

Built on Silicon Carbide (SiC) technology, this MPS range diode offers switching performance that is superior to traditional silicon diodes, with lower switching losses and higher temperature operation. A total capacitive charge of 4 nC contributes to faster switching speeds and reduced power dissipation. The component is housed in a compact DO-214 (SMB) surface-mount package with 2 pins, supporting straightforward integration into modern PCB designs. It is rated for a maximum operating temperature of +175°C.

**Key Features**

* Silicon Carbide (SiC) Schottky diode type
* MPS product range, single configuration
* Repetitive peak reverse voltage of 1.2 kV
* Average forward current of 1 A
* Total capacitive charge of 4 nC
* Surface-mount DO-214 (SMB) package with 2 pins
* Maximum operating temperature of +175°C

**Applications**

This Schottky diode is suited to power factor correction (PFC) circuits, switch-mode power supplies (SMPS), solar inverters, and electric vehicle charging systems, where high efficiency and thermal stability are critical. Its robust construction and high-voltage capability also make it a suitable choice for industrial motor controls and renewable energy applications.

Choose the Genesic Silicon Carbide Schottky Diode MPS Single 1.2kV 1A when a compact, high-voltage, high-temperature diode is required for efficient power switching.