DIODES INC. MMBT5401-7-F PNP Transistor, -150V, -600mA, SOT-23, SMD

The DIODES INC. MMBT5401-7-F is a PNP high-voltage transistor, designed for reliable performance in low-power amplification and switching applications. Featuring an epitaxial planar die construction, this transistor ensures consistent electrical characteristics and dependable operation. It is the complementary type to the NPN MMBT5551, offering design flexibility for push-pull and complementary circuit configurations.

Housed in a compact SOT-23 package, this surface-mount device is ideal for space-constrained PCB designs. With a power dissipation of 310mW at an ambient temperature of +25°C, it delivers efficient performance for low-power circuits. The transistor supports a collector-emitter voltage of -150V and a continuous collector current of -600mA, making it suitable for a wide range of switching and amplification tasks.

Key Features

• Epitaxial planar die construction for stable performance
• Complementary NPN type: MMBT5551
• SOT-23 package for surface-mount assembly
• Power dissipation: 310mW at TA = +25°C
• Operating and storage temperature range: -55°C to +150°C
• Collector-emitter saturation voltage: -0.2V max (at IC = -10mA, IB = -1mA, TA = +25°C)
• Current gain-bandwidth product: 300MHz (at VCE = -10V, IC = -10mA, f = 100MHz)
• Noise figure: 8.0dB max (at VCE = -5V, IC = -200µA, RS = 10Ω, f = 1kHz)

This transistor is an excellent choice for engineers and hobbyists seeking a high-voltage PNP transistor for low-power applications, offering a blend of performance, compactness, and reliability.