DIODES INC. ZXMP10A13FTA P-Channel MOSFET, -100V, 700mA, SOT-23

The DIODES INC. ZXMP10A13FTA is a high-performance P-channel enhancement mode MOSFET. Engineered for efficiency and reliability, this component utilises a unique structure that combines the significant benefits of low on-resistance with a fast switching speed, making it an outstanding choice for modern, high-efficiency power management applications.

Its design ensures minimal power loss during operation, contributing to improved overall system performance and energy savings. This MOSFET is particularly well-suited for applications demanding compact size and surface-mount technology, thanks to its industry-standard SOT-23 package.

Key Features & Performance

• Fast Switching & Low Input: Offers fast switching speed and low input capacitance, enabling efficient high-frequency operation.
• Efficient Drive: Features low gate charge and a low threshold voltage, simplifying drive circuitry and reducing switching losses.
• Robust Voltage Rating: Provides a drain-source voltage (Vds) of -100V, ensuring reliable operation in various circuit conditions.
• High Current Handling: Delivers a continuous drain current (Id) of -0.7A, with a pulsed drain current capability of -3.1A for handling transient loads.
• Low On-Resistance: Boasts a drain-source on-state resistance (Rds(on)) of just 1 ohm, minimising conduction losses and heat generation.

Technical Specifications

• Gate-Source Voltage (Vgs): ±20V
• Power Dissipation (Pd): 625mW
• Gate-Source Threshold Voltage (Vgs(th)): 4V max
• Package: 3-pin SOT-23, surface mount
• Operating Temperature Range: -55°C to +150°C

This robust and versatile MOSFET from DIODES INC. is a reliable solution for designers seeking to optimise power efficiency and performance in space-constrained electronic designs.