Infineon BSS139H6327 Power MOSFET N Channel 250V SOT-23

The Infineon BSS139H6327 is a SIPMOS® N-channel depletion mode Small Signal Transistor designed for efficient current regulation. This single component enables the creation of a simple current regulator, making it a versatile solution for a variety of applications.

Key features include dv/dt rating for enhanced robustness, halogen-free construction, and AEC-Q101 qualification, ensuring high reliability for demanding environments. The transistor is suitable for power management, automotive, consumer electronics, and communications networking applications.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 250V
• Continuous Drain Current (Id): 100mA
• Drain Source On State Resistance: 14 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: -1.4V
• Power Dissipation: 360mW
• No. of Pins: 3 Pins
• Operating Temperature Max: 150°C

The BSS139H6327 is an ideal choice for engineers looking for a reliable and efficient component for current regulation and power management tasks. Its AEC-Q101 qualification makes it suitable for automotive and industrial applications where high standards are required.