Infineon BSS308PE P-Channel MOSFET 30V 2A SOT-23

The Infineon BSS308PE H6327 is an advanced P-channel power MOSFET from the OptiMOS™ P3 small-signal family. Engineered with enhancement mode and logic level capability (rated at 4.5V), it is designed for efficient switching applications in space-constrained electronic designs. Its robust construction and high performance make it an excellent choice for modern power management solutions.

This transistor offers a low drain-source on-state resistance (Rds(on)) of just 0.08 ohm at a 10V test voltage, which minimises power loss and heat generation, enhancing overall system efficiency. It supports a continuous drain current of 2A and can handle a drain-source voltage of up to 30V, providing reliable operation in a variety of circuits. The component is qualified to the stringent AEC-Q101 automotive standard, ensuring high reliability and performance under demanding conditions, and includes built-in ESD protection for added durability.

Key Features & Benefits

• High-Performance Switching: Low Rds(on) and logic-level gate drive enable efficient power control.
• Automotive Grade: AEC-Q101 qualification makes it suitable for demanding automotive applications.
• Robust Design: Features a high maximum soldering temperature of 260°C and an operating temperature up to 150°C.
• Compact Footprint: Supplied in a surface-mount SOT-23 package, ideal for high-density PCB layouts.
• Enhanced Protection: Integrated ESD protection safeguards the device during handling and operation.

With its combination of low resistance, high current capability, and automotive-grade reliability, the Infineon BSS308PE is a versatile and dependable component for designers seeking to optimise performance and space.