INFINEON IR2112PBF Dual Power IC, High Side and Low Side, DIP-14, 420mA

The INFINEON IR2112PBF is a high voltage, high speed power MOSFET and IGBT driver with independent high and low-side referenced output channels. Its proprietary HVIC and latch immune CMOS technology ensures ruggedised monolithic construction, making it suitable for demanding power management applications.

Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic, offering flexibility in system integration. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

Key Features

• Floating channel designed for bootstrap operation
• Tolerant to negative transient voltage
• DV/DT immune
• Under-voltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Cycle-by-cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs

Specifications

• No. of Channels: 2
• Driver Configuration: High Side and Low Side
• Power Switch Type: IGBT, MOSFET
• No. of Pins: 14Pins
• IC Case / Package: DIP
• IC Mounting: Through Hole
• Input Type: Non-Inverting
• Source Current: 250mA
• Sink Current: 500mA
• Supply Voltage Min: 10V
• Supply Voltage Max: 20V
• Operating Temperature Min: -40°C
• Operating Temperature Max: 125°C
• Input Delay: 125ns
• Output Delay: 105ns

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. This IC is ideal for applications requiring efficient and reliable switching in a compact DIP-14 package.