Infineon IRF6218STRLPBF P-Channel Power MOSFET, 150V 27A, TO-263

The Infineon IRF6218STRLPBF is a high-performance, single P-channel Power MOSFET from the renowned HEXFET® series. This surface-mount device is engineered to deliver efficient power management with its fully characterised capacitance parameters, including effective COSS, which significantly simplifies circuit design and integration.

A standout feature is its exceptionally low gate-to-drain charge, which is crucial for minimising switching losses and enhancing overall energy efficiency in high-frequency applications. The MOSFET boasts a low static drain-to-source ON-resistance of just 0.15 ohm, ensuring minimal power dissipation during operation and contributing to cooler running temperatures.

For robust performance in demanding environments, the component is fully rated for avalanche energy and features a dynamic dV/dt rating, offering enhanced reliability against voltage transients. Its specifications make it an ideal choice for use as a reset switch in active clamp reset DC-to-DC converters, where precision and durability are paramount.

Housed in a TO-263 (D2PAK) package, this MOSFET is designed for surface-mount assembly, providing a compact footprint suitable for modern, space-constrained PCB layouts. With a high continuous drain current rating of 27A and a drain-source voltage of 150V, it is built to handle significant power levels reliably.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 150 V
• Continuous Drain Current (Id): 27 A
• Drain-Source On-State Resistance (Rds(on)): 0.15 Ω
• Gate-Source Threshold Voltage (Max): 5 V
• Power Dissipation: 250 W
• Package / Case: TO-263 (D2PAK)
• Mounting Type: Surface Mount
• Operating Temperature Max: 175 °C

This Infineon MOSFET combines advanced semiconductor technology with robust construction, making it a dependable and high